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Switching Diodes
MA6X124 (MA124)
Silicon epitaxial planar type
Unit : mm
For switching circuit I Features
* Four-element contained in one package, allowing high-density mounting * Centrosymmetrical wiring, allowing to free from the taping direction * Short reverse recovery time trr * Small terminal capacitance, Ct
4
2.90+0.20 -0.05 1.90.1 (0.95) (0.95) 5 6
1.50+0.25 -0.05 2.8+0.2 -0.3
0.16+0.10 -0.06
3
2
1
(0.65)
0.30+0.10 -0.05
10
1.1+0.2 -0.1 1.1+0.3 -0.1
Parameter Reverse voltage (DC) Peak reverse voltage Average forward current*1 Peak forward current*1 Non-repetitive peak forward surge current*1,2 Junction temperature Storage temperature Note) *1 : Value for single diode *2 : t = 1 s
Symbol VR VRM IF IFM IFSM Tj Tstg
Rating 80 80 100 225 500 150 -55 to +150
Unit V V mA mA mA C C
1 : Anode 1 2 : Cathode 1,2,3,4 3 : Anode 2
0 to 0.1
I Absolute Maximum Ratings Ta = 25C
4 : Anode 3 5 : Cathode 1,2,3,4 6 : Anode 4 Mini6-G2 Package
Marking Symbol: M2C Internal Connection
6 5 4 1 2 3
I Electrical Characteristics Ta = 25C
Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 75 V IF = 100 mA IR = 100 A VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 * IR, RL = 100 80 2 3 Conditions Min Typ Max 100 1.2 Unit nA V V pF ns
Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 * IR IF = 10 mA VR = 6 V RL = 100 Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50
90% tp = 2 s tr = 0.35 ns = 0.05
Note) The part number in the parenthesis shows conventional part number.
0.40.2
5
111
MA6X124
IF VF
1 000
105
Switching Diodes
IR V R
1.6 1.4
VF Ta
100
Forward current IF (mA)
104
Ta = 150C
Forward voltage VF (V)
10
Ta = 150C 100C 25C - 20C
Reverse current IR (nA)
1.2 1.0 0.8 0.6 0.4 0.2 10 mA 3 mA IF = 100 mA
103
100C
1
102
0.1
10
25C
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1 0 20 40 60 80 100 120
0 -40
0
40
80
120
160
200
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient temperature Ta (C)
IR Ta
105 VR = 75 V 35 V 1V 103
1.6 1.4
Ct VR
f = 1 MHz Ta = 25C
IF(surge) tW
1 000 300
tW
Ta = 25C
IF(surge)
Terminal capacitance Ct (pF)
104
Forward surge current IF(surge) (A)
Reverse current IR (nA)
1.2 1.0 0.8 0.6 0.4 0.2
100 30 10 3 1 0.3 0.1 0.03
Non repetitive
102
10
1 -40
0
40
80
120
160
200
0
0
20
40
60
80
100
120
0.1
0.3
1
3
10
30
Ambient temperature Ta (C)
Reverse voltage VR
(V)
Pulse width tW (ms)
112
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
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A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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